Method for rotational wafer cleaning in solution

ABSTRACT

A method for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.

This is a division, of application Ser. No. 08/269,737, filed Jul. 1,1994, now U.S. Pat. No. 5,520,205.

FIELD OF THE INVENTION

This invention generally relates to a method and apparatus for animproved wafer cleaner for use in fabricating wafers such as thesemiconductor wafers used for integrated circuits and electronicdevices.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application No. 08/269,717,filed Jul. 1, 1994, and titled "Rotational Megasonic Cleaner/Etcher forWafers".

BACKGROUND OF THE INVENTION

Without limiting the scope of the invention, the background is describedin reference to the wafer cleaning process steps in an integratedcircuit production facility. Semiconductor devices are typicallyfabricated on a circular semiconductor substrate called a wafer. Thecircuitry for the electronic devices is fabricated on a wafer ofsemiconductor material using photolithography and vapor phase depositiontechniques, and also selective etching techniques. Many electronicdevices are produced on a single wafer. After the individual devices arecompletely fabricated, the wafer is cut into the individual die. Thewafers used in the fabrication of semiconductor devices are typicallycircular and quite thin. One problem which arises in producing circuitryon the circular wafers is that particulate matter which accumulates onthe outer edge and the outer circumference of the wafer, in areas whereno circuitry is defined, migrates into the areas where circuitry isbeing defined. Particles left on wafers will be redistributed duringwafer processing and will move onto active die in the area of the waferthat is used for production. These particles cause defects in thecircuitry being defined on the wafer. As device geometries continue toshrink, these particles will become larger compared with the devicegeometries and the defects will correspondingly be more critical. Thesedefects result in nonfunctional electronic devices, which reduce theunit yield per wafer and correspondingly increase the cost of productionper unit.

Known prior art cleaning systems use a cleaning solution in a tankcoupled with a megasonic transducer to remove particulate matter fromtop and bottom interior surfaces of the wafers. These known systems failto adequately address the problem of removing particulate matter fromthe outer edge and outer circumference of the wafers. In known systems,the wafers are placed in the tank of cleaning chemicals and the tank isexcited by energy radiating from the megasonic transducer, whichincreases the rate of particle removal. Because the wafers are placed inthe tank in a vertical orientation, some parts of the wafer are fartheraway from the megasonic energy source than others. Typically thetransducer is located at the bottom of the tank and the energy radiatesfrom it. This results in a nonuniform cleaning rate from the bottom ofthe wafers to the top. As wafers increase in size to accommodate largercircuits and increasing integration, these effects will increase insignificance. Known cleaning systems correct for this nonuniform effectby using more processing time than that required at the areas closer tothe transducer in order to extend the proper cleaning results to thoseareas farther away. In spite of this, the wafers are cleanednonuniformly.

Additional particle problems arise because the wafers are stored incarriers or boats. In the megasonic processing tanks of the prior art,the wafers are placed into the tank while residing in a wafer boat. Eachwafer rests within grooves that separate the wafers and prevent themfrom colliding as they are moved. The wafers are vertically orientedwithin the boat. The sides and a small portion of the bottoms of thewafers are therefore contacting the boat. These surfaces are not cleanedefficiently by the megasonic processing tanks of the prior art, becausethey are essentially dead spots. Particles trapped in these places arenot effectively removed because the megasonic energy is partiallyblocked and because the particles are trapped between the wafers and theboat. Another area of the wafers that is not well cleaned by the cleanerconfigurations of the prior art is the top edge of the wafers. The topsedges of the wafers facing away from the transducer do not receivedirect line of sight megasonic energy and therefore are not cleaned aseffectively as the bottom edge. Particles left in these places willmigrate to the active areas of the wafer and become particle defects inthe wafer when the wafer is further processed.

Some known systems move wafers about in the tanks during cleaning butnone address the problem associated with nonuniform exposure to themegasonic energy source or the spaces between the wafer edge and theboats. Prior art approaches include moving the boats from side to sidewith a mechanism in the tank or using a robot arm to move the carrierduring processing. These approaches risk additional particlecontamination within the tank by introducing additional surfaces intothe tank. Further, using the robot arms in automated process flows tomove the wafers and boat could require that the robot arm move thewafers during the entire megasonic processing cycle, which ties up therobot arm and decreases overall process flow throughput. The robot armis typically used for many tasks, including moving the wafers into themegasonic tank. If the robot arm is required to stay in place throughoutthe megasonic cycle, the overall throughput of the system is decreased.Other tasks for the robot arm are now required to be deferred untilafter the megasonic processing is completed.

The nonuniform results of known prior art megasonic processes aredetectable with current technology wafers of 4 or 6 inches, and willbecome even more pronounced with 8 inch or larger wafers as thestandard. Larger wafers are being contemplated, which will make particledefects more critical still. The invention of this application addressesthe nonuniform clearing rates and the extended processing times forobtaining acceptable results with prior art megasonic cleaning andetching systems, and the particles left in place in prior art wafercleaning and etching systems.

SUMMARY OF THE INVENTION

Generally, and in one form of the invention, an improved wafer cleaneris described which features a wafer rotation system. Wafers are loadedinto a standard wafer carrier, or boat, which has grooves separating thewafers and supports the wafers at their edges while exposing the bottomand tops of the wafers. Solution for processing the wafers is added to aprocessing tank. The carrier and wafers are loaded into the tank and thewafers and carrier are immersed in the solution. In a preferredembodiment the tank contains a megasonic transducer, but some solutionswill operate with the invention without a transducer. Nozzles locatedalong the bottom of the tank are used to direct the pressurized solutionor a pressurized inert gas at the wafers at an angle designed to causethe wafers to rotate within their position in the carrier. If present,the megasonic transducer is activated. The rotation of the wafersensures that each wafer is uniformly exposed to the solution and themegasonic energy of the transducer during the processing time. Thesolution is recirculated and filtered to remove particles from thesolution. The rotating wafers experience a uniform cleaning rate due tothe rotation which exposes all surfaces to the solution and also to theenergy directly above the megasonic source.

After a rotation cycle, a second set of nozzles designed to produce avertical laminar flow is used to force any loose particulate whichresides in the tank upwards and over the side of a weir in tank in whichthe carrier or boat rests. The particles are then collected by therecirculating pump and trapped in the filter. The wafer rotation cyclecan then be repeated to remove more particles. The processing tank ofthe invention can also be used to clean particles from empty wafercarriers to further reduce the particles in a process flow. The nozzlesare directed at the grooved sides of the empty wafer carrier whereparticles are likely to become deposited with use of the wafer carrier,the megasonic transducer is activated and the carrier is therebycleaned. Again, the megasonic transducer is preferred, but not required.Other embodiments are described as well.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings:

FIG. 1 depicts a first view of a first embodiment of the rotationalwafer cleaner of the invention;

FIG. 2 depicts a second view of the rotational cleaner of the invention;

FIG. 3 depicts a third view Of the rotational cleaner of the invention;

FIG. 4 depicts a first view of a second preferred embodiment of therotational cleaner of the invention;

FIG. 5 depicts a second view of the rotational cleaner of FIG. 4; and

FIG. 6 depicts a third view of the rotational cleaner of FIG. 4.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

A first preferred embodiment wafer cleaning device is a wafer carrierand a processing tank. A megasonic transducer is preferably placed inthe tank but not required. This system can be used to clean wafers andfor processing steps used in fabricating semiconductor devices. Typicalprocessing steps where the preferred embodiment can be used includegeneral wafer cleaning, local interconnect wet etch processing, andexcess Ti/TiN strip after TiSi₂ silicide formation. During the cleaningor processing step, the wafers are rotated inside the wafer carrier bydirecting pressurized solution through nozzles directed at an angle tothe bottom edge of the wafers. This rotation enhances the efficiency anduniformity of the cleaning action because all of the areas of the wafersare exposed to the solution and to the energy from the megasonictransducer within the cleaning tank in a uniform manner, so that auniform clean rate occurs. The rotation moves the wafers within thegrooves in the carrier, so that areas otherwise blocked off from themegasonic energy are all exposed directly to the transducer.

A second preferred embodiment wafer cleaner and carrier includes arotational cleaning tank which has a pressurized gas source coupled tothe rotational nozzles for an enhanced particle removal system. In thisembodiment, a filter and pump are used for laminar flow, and a inert gassystem is used to rotate the wafers. After the wafers are rotated in thesolution for a time, it is expected that particles will be dislodged andwill be present in the tank. The rotation nozzles are deactivated andthe laminar flow nozzles are activated to displace any particles awayfrom the bottom of the tank and grooves of the boats, and upwards over aweir within the tank. Once the particles are lifted over the weir, therecirculation pump and filter are used to remove the particles from thesolution. Preferably a megasonic transducer is included, and again therotation action uniformly exposes the wafers to the energy from themegasonic transducer. If desired, additional rotation and laminar flowcycles can then be applied to the wafers to achieve the level ofparticle removal desired for a particular process flow.

FIG. 1 depicts a first view of the processing tank 1 of the preferredembodiment. The wafer carrier 3 is a preferably a known wafer carrier orboat which is open at the top and bottom and separates the wafers bygrooves. One wafer could be cleaned using the system of the invention,but typically economies of scale dictate batches of wafers are cleanedto take advantage of the chemicals and solutions. Other wafer carrierscould be used so long as the carriers are open at the top and bottom andthe wafers can freely turn within the carrier. Tank 1 comprises sides 5,bottom 7, weir 9, nozzles 11, filter 13, pump 15, recirculation inlet17, valve 14, and recirculation jets 16. Megasonic transducer 18 ispreferably included, but the invention will operate and advantageouslyclean the wafers without it.

Tank 1 is preferably rectangular in shape, but other shapes are possiblealternatives so long as they will receive the boat 3. Weir 9 is arectangular area within tank 1 and having sides that are taller than thetop of the wafers resting in the wafer carrier 3, but lower than thesides of tank 1. Weir 9 could also take other shapes so long as the boator carrier 3 will fit within it. A megasonic transducer 18 is optionallylocated on the bottom of weir 9. Alternatively, the transducer 18 couldbe located at the bottom of tank 1. The transducer is a source ofmegasonic energy, usually classified as energy in the range of 800 kHzto 2-3 MHZ. Recirculation jets 16 are located at the bottom corners ofweir 9, in the preferred embodiment shown here two jets are used, butmore or less are feasible alternatives. Valve 14 is used to direct thepressure from pump 15 to either recirculation jets 15 or rotationnozzles 11.

In operation, a cleaning or processing solution is added to the tank 1and fills weir 9. This may be accomplished by fill and recirculationnozzles 16 located within the tank, by an inlet line coupled to pump 17,or by an external nozzle means. Once weir 9 is filled with the solutionfor the particular processing step, boat or carrier 3 is loaded withwafers and introduced into the tank and immersed in the solution in weir9. If megasonic transducer 18 is included, the megasonic transducer 18is activated to emit megasonic energy towards the wafers.

Pump 15 is now used to drive pressurized solution taken from solutioninlet 17 out through filter 13 and nozzles 11. Valve 14 directs thepressurized solution to nozzles 11 during this operation. The pressureshould be high enough to create a sufficient force to begin rotation ofthe wafers in boat 8. Rotation rates of approximately 2 revolutions perminute have been observed using a pump and filter having a flow rate of3-4 liters/minute and using nozzles 1/4" in diameter, with wafers thatare 150 mm in diameter. The nozzles 11 are angled to the wafer, the mosteffective angles observed were 20-40 degrees. A tangential flow alsoproduced rotation with sufficient pressure. A high rate of rotation isnot required so long as the wafers are moved so that the outside edge ofeach wafer is exposed directly to the solution and, if present, totransducer 18 and the megasonic energy. This is important because theboat 3 material blocks the megasonic energy, and fluid flow, to thoseareas of the wafer which are not directly above the transducer. Theedges of the wafers are particularly important, because the edges aretypically not polished and are therefore more likely to trap particles.By rotation the entire outside edge of each wafer is directly exposed tothe energy output by the transducer, and the wafers are moved in thegrooves or the boat, which should disturb particles resting between thewafer and the grooved areas of the boat, so that both the boat and thewafers are simultaneously cleaned. Alternatively, the wafers could berotated in a stepwise fashion. This alternative involves using pump 15and nozzles 11 to move the wafers a predetermined part of a rotation,then allowing them to rest, then repeating the cycle until the entirearea of the wafer is exposed directly to the energy from the megasonicenergy source.

While the high pressure nozzles 11 will rotate the wafers, they alsowill create eddy currents within the tank. These currents will createdead spots in the tank 1 generally at the bottom of weir 9. Particlesremoved from the wafers which are not pushed out of the weir 9 into tank1 will tend to accumulate in the center of the bottom of weir 9. It isimportant that these particles be removed from the solution before thewafers are removed from the tank.

Once the cleaning cycle has taken place for a predetermined time, therotation nozzles 11 will be deactivated. Valve 14 is now moved to itssecond position. Pump 15 and filter 13 are now used to drive therecirculation jets 16. As an alternative, two separate pump and filtercombinations could be used, one for laminar flow and one for rotationalflow. Recirculation jets 16 provide a low pressure flow which extendsthroughout the weir 9 and moves particles which have accumulated on thebottom of the tank upwards and over the top edge of weir 9. After beingpushed out of the weir 9 the particles will be drawn into inlet 17 andtrapped within the filter media in filter 13. It is important to performthis step with the wafers in place so that the particles are removedbefore the wafers are removed from the tank 1. If the wafers are removedbefore the particle removal cycle is performed the particles will tendto be redeposited on the wafers, most of the redeposition occurring atthe surface of the tank due to surface tension effects. To be mosteffective pump 15 may require two speeds, a high pressure speed fordriving the rotation nozzles 11, and a lower pressure speed for drivingthe laminar flow recirculation jets 16. It is important that the laminarflow jets 16 be operated at a lower pressure to create an upwards liftwithout producing any eddy currents, which tend to trap particles. Aniterative cycle of wafer rotation, followed by laminar flow, followed bywafer rotation, could be employed to achieve the desired level ofparticle removal. If two pumps are used, the laminar flow jets 16 arepreferably left on continuously while the rotational nozzles are cycledon and off.

Various solutions can be used in the megasonic processing tank,depending on the stage of the wafer processing. Before any deposition ismade on the wafer, a solution of NH₄, H₂ O₂ and water is an excellentchoice for particle removal. Deionized water can be used once structureswhich are vulnerable to cleaning chemicals and adds have been depositedupon the wafer, however its effectiveness is laminated by high surfacetension and the fact that it does no etching. For other stages, othersolutions are used. Typical solutions which may be used include socalled piranha solutions, solutions of sulfuric acid, H₂ SO₄ andperoxide H₂ O₂ in water, solutions comprised of ammonia and hydrogenperoxide, NH₄ OH and H₂ O₂ in water, solutions including hydrogenfluoride, HF, buffered solutions including buffered HF solutions,solutions of hydrochloric acid and hydrogen peroxide, solutions ofphosphoric acid and other alternatives for these are all suitable forcertain stages of wafer processing. If the megasonic transducer is used,the megasonic energy speeds up the action of the cleaner solution andthereby improves particle removal. However, many solutions are effectivein the absence of megasonic energy. To remove nitride, for example, ahigh temperature phosphoric acid bath is used. Rotation of the wafersexposes areas otherwise hidden by the boats and thereby improvesparticle removal.

Alternative configurations of nozzles 11 could be used in the embodimentshown in FIG. 1. Experimental use has demonstrated that an increasedrate of rotation is achieved when the nozzles are pointed not justdirectly at the bottom edge of the wafers, but also angled to the facesof the wafers so that the pressurized solution contacts the backsidesurface as well as the wafer edge. FIG. 1 depicts a plurality ofnozzles, each directed at one of the wafers. This embodiment couldfurther be enhanced by providing another valve system coupled to thenozzles 11 so that only one or a small group of the nozzles is active atone time. By splitting the rotation of the wafers up into groups, alower volume pump could be used with good effect, so long as thepressure directed at the wafer or wafers being rotated is sufficient.

FIG. 2 depicts a side view of one embodiment of the processing tank ofFIG. 1, and again having sides 5, weir 9, filter 18, pump 15, inlet 17,bottom 7, boat 8, nozzles 11, recirculation jets 16, valve 14 andshowing optional megasonic transducer 18. FIG. 2 shows a funnel shapedmember directed at all of the wafers in boat 3 through slots or openingswhich make up nozzles 11. This is a simple means to provide the nozzles11. Alternatives which will also provide the advantages of the inventioninclude a valved multiple nozzle system as discussed above, whereindividual or small groups of nozzles are ganged together, or splittingup the single funnel and nozzle system of FIG. 2 into two or threefunnels and nozzles to reduce the maximum load on pump 15.

FIG. 8 depicts an end view of the processing tank 1 of FIG. 1 or FIG. 2.Again, pump 15, filter 13, inlet 17, and nozzle 11 are shown in tank 1which has bottom 7, sides 8, and weir 9. Boat 8 is shown and the arrowsindicate the flow of solution within the tank. Megasonic transducer 18is located at the inside surface of weir 9. Recirculation jets 18 arelocated in the bottom corners of weir 9.

In the embodiment where the megasonic transducer is used, the transducer18 is long enough to radiate energy at each of the wafers while therotation takes place. The rotation of the wafers over the transducer isan improvement over the prior art megasonic tanks, where there are areasof the wafers which are never directly exposed to the megasonic energy.The boat 3 is open at the bottom so that the edges of the rotatingwafers are directly exposed to transducer 18.

FIG. 4 depicts a view of another preferred embodiment. Tank 21 comprisessides 23, bottom 25, weir 29, filter 37, pump 39, recirculation inlet27, carrier 47, recirculation inlet 41 coupled to laminar flow jets 43,all arranged as before, and inlet 33 which is coupled to nozzles 31. Ahigh pressure gas source, such as the nitrogen gas typically availablein wafer processing areas, is coupled to inlet 33. Optional transducer45 is shown at the bottom of weir 29.

FIG. 5 depicts a side view of the preferred embodiment of FIG. 4. Tank21 again comprises sides 23, bottom 25, weir 29, recirculation inlet 27,nozzles 31, gas inlet 33, filter 37, pump 39, recirculation inlet 41coupled to laminar flow jets 43, and boat 47. Optional transducer 45 isalso depicted.

FIG. 6 depicts an end view of the preferred embodiment of FIGS. 4 and 5.The elements and numbers are common to those shown in FIGS. 4 and 5.

In operation, the preferred embodiment of FIGS. 4, 5 and 6 operates inmuch the same manner as the embodiment of FIG. 1. Cleaning or processingsolution is added by means of recirculation and laminar flow jets 43,coupled to pump 39 and filter 37 by inlets 41, or by other means.Recirculation fluid is taken from inlet 27 and filtered through filter37 as before. A wafer carrier 47 is inserted in the tank 21. Megasonicenergy is applied by transducer 45 if the transducer is used. The wafersare rotated, however now not by operation of the pump 39, but instead byuse of the high pressure gas which feeds nozzles 31 from inlet 33. Thisarrangement has several advantages. First, it allows the pump 39 andfilter 37 to have a single speed. No valves or controls are needed todirect the flow from pump. Also, the embodiment of FIGS. 4, 5 and 6 canoperate with the laminar flow system always enabled, and the rotationcycle can be continuous or it can be cycled on and off, whichever methodgives better particle control results for a particular wafer size. Byleaving the pump 39 and laminar flow jets 43 always on, the need forcontrol of pump 39 is eliminated. The weir 29 will still retainparticles during the rotation cycles, therefore it is preferred thatafter the wafers are rotated over the megasonic transducer 45 by gasbeing quiet through nozzles 31 through inlet 33, the rotation cycle bestopped and a recirculation cycle is performed. In the recirculationcycle, laminar flow jets 43 give a low pressure laminar lift to lifttrapped particulate over the top of weir 29 and the particulate is thendrawn into inlet 27, the solution is then recycled by pump 39 throughfilter 37 and is thus filtered as before. This cycle should operate forseveral minutes until the desired level of particle removal is reached,and only then should the wafers be removed from the tank.

The gas being input to inlet 33 can be any inert or nonreactive gas,usually pressurized nitrogen is readily available in a wafer processingfacility and is therefore preferred. Other driving agents, such aspressurized deionized water are also typically readily available andcould be used instead of the gas.

Any of the embodiments described above can also be easily adapted to useas a boat cleaning tank. By directing the flow from the nozzles at andup the grooves in the boats, particles Could be removed from empty boatsand the megasonic energy, now not impeded by the wafers, will reach thegrooves of the boats. These boats can then be used subsequently withoutintroducing additional particles to new wafers to be processed.

All of the embodiments described herein provide for efficient use of thesolutions by enhancing the efficiency of particle removal from thesolution and the wafers, so that the solutions may be used for severalbatches of wafers before new solution is needed. This reduces the costof production and also minimizes the amount of chemical disposalrequired.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

What is claimed is:
 1. A method for cleaning silicon wafers, comprisingthe steps of:providing a tank; providing a wafer carrier disposed withinsaid tank for receiving at least one semiconductor wafer and havingsupports for holding said at least one semiconductor wafer in asubstantially upright position; providing at least one semiconductorwafer within said wafer carrier; providing a nozzle means for directingpressurized cleaning solution at said at least one semiconductor wafer;and rotating said at least one semiconductor wafer about a central axiswithin said supports of said wafer carrier by said pressurized cleaningsolution received from said nozzle means.
 2. The method of claim 1 andfurther comprising the steps of:allowing said tank to partially fillwith said cleaning solution supplied by said nozzle means; providing amegasonic transducer within said tank; and exposing said at least onesemiconductor wafer to megasonic energy produced by said megasonictransducer.
 3. The method of claim 1 and further comprising the stepsof:disposing said cleaning solution within said tank such that said atleast one semiconductor wafer is immersed in said solution when saidwafer and said wafer carrier are disposed within said tank.
 4. Themethod of claim 3, wherein said step of disposing said cleaning solutioncomprises the step of disposing a solution of NH₄ OH and H₂ O₂ in water.5. The method of claim 1, and further comprising the steps of:providinga pump coupled to said nozzle means for providing said pressurizedcleaning solution, and for receiving recirculating said cleaningsolution from said tank.
 6. The method of claim 5 and further comprisingthe steps of:providing a filter coupled to said pump for trappingparticles out of said cleaning solution before it returns to said tank.7. The method of claim 6, and further comprising the steps of:providinga weir within said tank, the wafer carrier being placed inside saidweir; providing laminar flow jets within said weir and coupled to saidpump; and using said laminar flow jets to produce a laminar verticalflow within said weir which pushes particles within said weir upwardsand over the top of said weir, said particles then being drawn into saidpump and said filter.
 8. The method of claim 7, and further comprisingthe steps of:providing a valve means coupled to said pump andalternatively directing said pressurized cleaning solution to saidnozzle means and to said laminar flow jets; and using said valve meansto alternatively direct said pressurized cleaning solution to saidnozzle means and to said laminar flow jets to create alternating cyclesof said cleaning solution recirculation and rotation of said at leastone semiconductor wafer, the alternating cycles continuing until adesired level of particle removal is achieved.
 9. The method of claim 1,wherein said nozzles are coupled to an inlet for pressurized gas, saidpressurized gas being used to cause said at least one semiconductorwafer to rotate.